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Journal Articles

Improvement of luminescence capability of Tb$$^{3+}$$-related emission by Al$$_{x}$$Ga$$_{1-x}$$N

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Physica Status Solidi (B), 240(2), p.372 - 375, 2003/11

https://doi.org/10.1002/pssb.200303479
 Times Cited Count：19 Percentile：65.52(Physics, Condensed Matter)

Luminescence propeties of Tb-doped Al$$_{x}$$Ga$$_{1-x}$$N were studied. The samples were grown on sapphire substrates using OMVPE. Tb implantation was cariied out to introduce Tb into samples. After implantation, samples were annealed at 1000 to 1150 $$^{o}$$C in 10% NH$$_{3}$$ diluted with N$$_{2}$$. The luminescence intensity for Al$$_{x}$$Ga$$_{1-x}$$N x=0.1 is 5 times stronger than that for x=0 at 14 K. The luminesecence intensity for GaN rapidly decreases with temperature and its activation enegy is 7.8 meV. With increasing Al content, the activation enegy increases, and the activation energy for Al$$_{0.1}$$Ga$$_{0.9}$$N is 70 meV.

Journal Articles

Disruption studies in JT-60U

Kawano, Yasunori; Yoshino, Ryuji; Neyatani, Yuzuru; Nakamura, Yukiharu; Tokuda, Shinji; Tamai, Hiroshi

Fusion Science and Technology (JT-60 Special Issue), 42(2-3), p.298 - 314, 2002/09

https://doi.org/10.13182/FST02-A230
 Times Cited Count：13 Percentile：63.33(Nuclear Science & Technology)

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